PBHV9050Z,115 datasheet

Маркировка

PBHV9050Z,115
Производитель

NXP Semiconductors
Описание

NXP Semiconductors PBHV9050Z,115 Current - Collector (ic) (max): 250mA Current - Collector Cutoff (max): 100nA Dc Current Gain (hfe) (min) @ Ic, Vce: 80 @ 50mA, 10V Frequency - Transition: 50MHz Lead Free Status / Rohs Status: Lead free / RoHS Compliant Mounting Type: Surface Mount Package / Case: TO-261-4, TO-261AA Power - Max: 700mW Series: - Transistor Type: PNP Vce Saturation (max) @ Ib, Ic: 350mV @ 20mA, 100mA Voltage - Collector Emitter Breakdown (max): 500V RoHS: yes Configuration: Single Transistor Polarity: PNP Collector- Emitter Voltage VCEO Max: - 500 V Emitter- Base Voltage VEBO: - 6 V Gain Bandwidth Product fT: 550 MHz DC Collector/Base Gain hfe Min: 100 Mounting Style: SMD/SMT Continuous Collector Current: - 0.25 A Maximum Power Dissipation: 700 mW Factory Pack Quantity: 1000 Other Names: 568-5575-2
Количество страниц

13 шт.
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153,34 KB